Gallium nitride monolithic microwave integrated circuit (MMIC) technology has superior performance in power amplifier applications, as well as for low-noise amplifiers with high dynamic range and the ability to survive large, potentially damaging input power levels without the need for additional limiters at the system level. Army Research Laboratory, Adelphi, Maryland The US Army Combat Capabilities Development Command Army Research Laboratory (ARL) has been evaluating and designing efficient broadband high-power amplifiers for use in sensors, communications, networking, and electronic warfare (EW). ARL submitted designs of Ka-band low-noise amplifiers (LNAs), power amplifiers (PAs), and transmit/receive (T/R) switches using Qorvo Inc.'s high-performance 0.15-μm gallium nitride (GaN) fabrication process. These amplifiers were fabricated as one- and two-stage designs, as well as integrated T/R modules for bidirectional transceivers as part of a recent ARL Qorvo Prototype Wafer Option