Performance Characteristics of MOSFETs Operating at High Power

2000-01-3622

10/31/2000

Event
Power Systems Conference
Authors Abstract
Content
This paper demonstrates that the on-resistance of a power MOSFET decreases significantly when the operating temperature decreases. The decrease in on-resistance under cryogenic temperature allows the device to operate at a much higher power and current condition. Also, it is demonstrated that the MOSFET device can be effectively kept at cryogenic temperature by spray cooling with liquid nitrogen. Over 80 W of heat generated can be removed continuously with spray cooling.
Meta TagsDetails
DOI
https://doi.org/10.4271/2000-01-3622
Pages
7
Citation
Lin, Y., Sundaram, K., and Chow, L., "Performance Characteristics of MOSFETs Operating at High Power," SAE Technical Paper 2000-01-3622, 2000, https://doi.org/10.4271/2000-01-3622.
Additional Details
Publisher
Published
Oct 31, 2000
Product Code
2000-01-3622
Content Type
Technical Paper
Language
English