Performance Characteristics of MOSFETs Operating at High Power

2000-01-3622

10/31/2000

Authors
Abstract
Content
This paper demonstrates that the on-resistance of a power MOSFET decreases significantly when the operating temperature decreases. The decrease in on-resistance under cryogenic temperature allows the device to operate at a much higher power and current condition. Also, it is demonstrated that the MOSFET device can be effectively kept at cryogenic temperature by spray cooling with liquid nitrogen. Over 80 W of heat generated can be removed continuously with spray cooling.
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Citation
Lin, Y., Sundaram, K., and Chow, L., "Performance Characteristics of MOSFETs Operating at High Power," SAE Technical Paper 2000-01-3622, 2000, https://doi.org/10.4271/2000-01-3622.
Additional Details
Publisher
Published
10/31/2000
Product Code
2000-01-3622
Content Type
Technical Paper
Language
English