Spintronic Effects in Semiconductor Nanostructures

Progress has been made in calculation of spintronic effects in semiconductor nanostructures. The calculations contribute to the body of theoretical knowledge complementing recent experimental advances in generating, transporting, and detecting coherent spin-polarized populations of electron and nuclear spins in semiconductors. The experimental advances have demonstrated that spintronic effects could be harnessed as the basis of novel nanoscale devices. Theoretical advances are needed to understand and extend the experimental advances by enabling inference of previously unknown phenomena from results of experiments and incorporation of these phenomena into realistic models of operation and performance of spintronic devices, including devices that could be used in quantum computation.