Rhombohedron Epitaxial Growth with Molten Target Sputtering (MTS) at 500 °C Substrate Temperature

This invention applies to the field of sputtering, depositing SiGe thin films on sapphire substrates. It is a method of modifying the film growth front, enabling epitaxially grown heterostructure devices at lower temperatures and with higher purity, avoiding the conventional time required (2 hours) and high-energy-consumption thermal soaking at a high temperature (800 °C.) Less than 500 °C is enough to grow the single-crystal Si1-xGex (x=0.85) film because much higher-kinetic-energy molecules reach the substrate.