Development of High Quality 4H-SiC Thick Epitaxy for Reliable High Power Electronics Using Halogenated Precursors

Development of robust semiconductor devices with high energy efficiency and reliability is a key objective towards 'Energy Conversion and Power Management ' for naval system applications. The goal of this research is to create the fundamental knowledge needed for the development of novel approaches to synthesize high-quality, thick SiC epitaxial layers (> 100μm) for reliable high voltage (≥10kV) / high power (>100 kW) electronics for navy ship applications.