Current Source Logic Gate

High-temperature electronic integrated circuits have been demonstrated in silicon carbide (SiC) depletion mode MESFETs. This process is only capable of producing depletion mode n-channel MESFET transistors. With only this type of transistor, designing a logic gate is a challenge. A previous logic gate design that can be constructed in the current process has performed well. This invention improves upon the previous design by increasing output voltage range and decreasing the physical layout size of a logic gate. This logic gate circuit consists of depletion mode MESFET/JFET transistors and resistors that can be constructed with SiC depletion mode n-channel MESFETs.